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| 2SB124100ML 2SB124100ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION O O O O O O 2SB124100ML is a schottky barrier diode chips Lb Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits.; Chip Topography and Dimensions La: Chip Size: 1240m; Lb: Pad Size: 1100m; O Chip Size:1240m X 1240m; Chip Thickness: 28020m; O ORDERING SPECIFICATIONS Product Name 2SB124100MLYY Specification For axial leads package ABSOLUTE MAXIMUM RATINGS Parameters Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge Current@8.3ms Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 100 2 50 125 -40~125 Unit V A A C C ELECTRICAL CHARACTERISTICS (Tamb=25C) Parameters Reverse Voltage Forward Voltage Reverse Current Symbol VBR VF IR Test Conditions IR=1mA IF=2A VR=100V Min. 100 --Max. -0.85 1 Unit V V mA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.04.27 Page 1 of 1 La fabricated in silicon epitaxial planar technology; |
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